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Freescale Semiconductor ` Technical Data
Document Number: MRF6VP41KH Rev. 0, 1/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. * Typical Pulsed Performance at 450 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak, Pulse Width = 100 sec, Duty Cycle = 20% Power Gain -- 20 dB Drain Efficiency -- 64% * Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 Watts Peak Power Features * Qualified Up to a Maximum of 50 VDD Operation * Integrated ESD Protection * Excellent Thermal Stability * Designed for Push - Pull Operation * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * RoHS Compliant * In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6VP41KHR6 MRF6VP41KHSR6
10 - 450 MHz, 1000 W, 50 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs
CASE 375D - 05, STYLE 1 NI - 1230 MRF6VP41KHR6
CASE 375E - 04, STYLE 1 NI - 1230S MRF6VP41KHSR6 PARTS ARE PUSH - PULL
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg TC TJ Value - 0.5, +110 - 6, +10 - 65 to +150 150 200 Unit Vdc Vdc C C C
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF6VP41KHR6 MRF6VP41KHSR6 1
RF Device Data Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 1000 W Pulsed, 100 sec Pulse Width, 20% Duty Cycle Symbol RJC Value (1,2) 0.03 Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics (3) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain - Source Breakdown Voltage (ID = 300 mA, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (3) (VDS = 10 Vdc, ID = 1600 Adc) Gate Quiescent Voltage (4) (VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test) Drain - Source On - Voltage (3) (VGS = 10 Vdc, ID = 4 Adc) Dynamic Characteristics (3) Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 3.3 147 506 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1 1.5 -- 1.68 2.2 0.28 3 3.5 -- Vdc Vdc Vdc IGSS V(BR)DSS IDSS IDSS -- 110 -- -- -- -- -- -- 10 -- 100 5 Adc Vdc Adc mA Symbol Min Typ Max Unit
Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), f = 450 MHz, 100 sec Pulse Width, 20% Duty Cycle Power Gain Drain Efficiency Input Return Loss Gps D IRL 19 60 -- 20 64 - 18 22 -- -9 dB % dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Each side of device measured separately. 4. Measurement made with device in push - pull configuration.
MRF6VP41KHR6 MRF6VP41KHSR6 2 RF Device Data Freescale Semiconductor
B1 VBIAS + C1 COAX1 Z8 Z2 RF INPUT Z1 Z3 C6 Z9 C21 COAX2 Z15 L2 L4 B2 VBIAS + C11 Z1 Z2*, Z3* Z4*, Z5* Z6, Z7 Z8*, Z9* Z10, Z11 Z12, Z13 C12 C13 C14 Z14*, Z15* Z16, Z17 Z18, Z19 Z20, Z21, Z22, Z23 Z24 PCB C31 C32 C33 C34 C20 C5 C7 C8 Z5 C9 Z7 C10 DUT Z11 Z13 C15 C16 C17 C18 C19 Z4 Z6 Z10 Z12 C2 C3 C4 L1 L3 Z14 Z16 Z18 Z20 Z22 C22 C23 C25 C26 C27 C28
+ C29
+ C30
VSUPPLY
COAX3
RF Z24 OUTPUT C24
Z17
Z19
Z21
Z23
COAX4
+ C35
+ C36
VSUPPLY
0.366 x 0.082 Microstrip 0.170 x 0.100 Microstrip 0.220 x 0.451 Microstrip 0.117 x 0.726 Microstrip 0.792 x 0.058 Microstrip 0.316 x 0.726 Microstrip 0.262 x 0.507 Microstrip
0.764 x 0.150 Microstrip 0.290 x 0.430 Microstrip 0.100 x 0.430 Microstrip 0.080 x 0.430 Microstrip 0.257 x 0.215 Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55
* Line length includes microstrip bends
Figure 2. MRF6VP41KHR6 Test Circuit Schematic
Table 5. MRF6VP41KHR6 Test Circuit Component Designations and Values
Part B1, B2 C1, C11 C2, C12, C28, C34 C3, C13, C27, C33 C4, C14 C5, C6, C8, C15 C7, C10 C9 C16 C17 C18 C19 C20, C21, C22, C23, C25, C32 C24 C26, C31 C29, C30, C35, C36 Coax1, 2, 3. 4 L1, L2 L3, L4 Description 47 , 100 MHz Short Ferrite Beads 47 F, 50 V Electrolytic Capacitors 0.1 F Chip Capacitors 220 nF, 50 V Chip Capacitors 2.2 F, 50 V Chip Capacitors 27 pF Chip Capacitors 0.8 - 8.0 pF Variable Capacitors 33 pF Chip Capacitor 12 pF Chip Capacitor 10 pF Chip Capacitor 9.1 pF Chip Capacitor 8.2 pF Chip Capacitor 240 pF Chip Capacitors 5.6 pF Chip Capacitor 2.2 F, 100 V Chip Capacitors 330 F, 63 V Electrolytic Capacitors 25 Semi Rigid Coax, 2.2 Long 2.5 nH, 1 Turn Inductors 43 nH, 10 Turn Inductors Part Number 2743019447 476KXM063M CDR33BX104AKYS C1812C224K5RAC C1825C225J5RAC ATC100B270JT500XT 27291SL ATC100B330JT500XT ATC100B120JT500XT ATC100B100JT500XT ATC100B9R1CT500XT ATC100B8R2CT500XT ATC100B241JT200XT ATC100B5R6CT500XT 2225X7R225KT3AB EMVY630GTR331MMH0S UT - 141C- 25 A01TKLC B10TJLC Manufacturer Fair - Rite Illinois Kemet Kemet Kemet ATC Johanson Components ATC ATC ATC ATC ATC ATC ATC ATC Multicomp Micro - Coax CoilCraft Coilcraft
MRF6VP41KHR6 MRF6VP41KHSR6 RF Device Data Freescale Semiconductor 3
C29 C1 B1 C2 C3 C4 MRF6VP41KH Rev. 1 C27 C28 C30
C25 L1
C26 COAX3
COAX1
L3
C5 C7 C8 C9
C10
C23 C18 C19 C16 CUT OUT AREA C15
C22
C6
C17
C20 C21 C24
COAX2
L2 C32
L4
COAX4
C31 C35
B2 C12 C11 C13
C14
C33
C36
C34
Figure 3. MRF6VP41KHR6 Test Circuit Component Layout
MRF6VP41KHR6 MRF6VP41KHSR6 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
1000 Ciss TJ = 200C C, CAPACITANCE (pF) Coss 100 Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc ID, DRAIN CURRENT (AMPS) TJ = 175C TJ = 150C 10 100
10
Crss
TC = 25C 1 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 1 1 10 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 100 200
Figure 4. Capacitance versus Drain - Source Voltage
21 20 Gps, POWER GAIN (dB) 19 18 17 16 15 14 13 1 10 100 Pout, OUTPUT POWER (WATTS) PULSED D VDD = 50 Vdc IDQ = 150 mA f = 450 MHz Pulse Width = 100 sec Duty Cycle = 20% Gps 80 70 D, DRAIN EFFICIENCY (%) 60 50 40 30 20 10 0 1000 2000 Pout, OUTPUT POWER (dBm) 65 64 63 62 61 60 59 58 57 56 55 34 35
Figure 5. DC Safe Operating Area
P3dB = 60.70 dBm (1174.89 W)
Ideal
P1dB = 60.33 dBm (1078.94 W)
Actual VDD = 50 Vdc IDQ = 150 mA f = 450 MHz Pulse Width = 100 sec Duty Cycle = 20% 36 37 38 39 40 41 42 43 44
Pin, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency versus Output Power
23 IDQ = 6000 mA 22 Gps, POWER GAIN (dB) 21 20 19 375 mA 18 17 10 100 Pout, OUTPUT POWER (WATTS) PULSED 1000 2000 150 mA VDD = 50 Vdc f = 450 MHz Pulse Width = 100 sec Duty Cycle = 20% 1500 mA 750 mA Gps, POWER GAIN (dB) 3600 mA 20 22
Figure 7. Pulsed Output Power versus Input Power
18 50 V 45 V 16 35 V VDD = 30 V 14 IDQ = 150 Vdc, f = 450 MHz Pulse Width = 100 sec Duty Cycle = 20% 0 200 400 600 800 1000 1200 1400 40 V
12 Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus Output Power
Figure 9. Pulsed Power Gain versus Output Power
MRF6VP41KHR6 MRF6VP41KHSR6 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
65 60 Pout, OUTPUT POWER (dBm) 25_C 55 50 45 40 35 20 VDD = 50 Vdc IDQ = 150 mA f = 450 MHz Pulse Width = 100 sec Duty Cycle = 20% 25 30 35 40 45 TC = -30_C 85_C Gps, POWER GAIN (dB) 22 21 20 19 18 17 16 15 14 13 12 1 10 100 Pin, INPUT POWER (dBm) PULSED Pout, OUTPUT POWER (WATTS) PULSED Gps D 25_C VDD = 50 Vdc IDQ = 150 mA f = 450 MHz Pulse Width = 100 sec Duty Cycle = 20% TC = -30_C 100 90 D, DRAIN EFFICIENCY (%) 80 85_C 70 60 50 40 30 20 10 0 1000 2000
Figure 10. Pulsed Output Power versus Input Power
107
Figure 11. Pulsed Power Gain and Drain Efficiency versus Output Power
MTTF (HOURS)
106
105
104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Pulse Width = 100 sec, Duty Cycle = 20%, and D = 64%. MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 12. MTTF versus Junction Temperature
MRF6VP41KHR6 MRF6VP41KHSR6 6 RF Device Data Freescale Semiconductor
Zo = 2
f = 450 MHz f = 450 MHz Zload
Zsource
VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak f MHz 450 Zsource W 0.86 + j1.06 Zload W 1.58 + j1.22
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 13. Series Equivalent Source and Load Impedance
MRF6VP41KHR6 MRF6VP41KHSR6 RF Device Data Freescale Semiconductor 7
PACKAGE DIMENSIONS
MRF6VP41KHR6 MRF6VP41KHSR6 8 RF Device Data Freescale Semiconductor
MRF6VP41KHR6 MRF6VP41KHSR6 RF Device Data Freescale Semiconductor 9
MRF6VP41KHR6 MRF6VP41KHSR6 10 RF Device Data Freescale Semiconductor
MRF6VP41KHR6 MRF6VP41KHSR6 RF Device Data Freescale Semiconductor 11
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Jan. 2008 * Initial Release of Data Sheet Description
MRF6VP41KHR6 MRF6VP41KHSR6 12 RF Device Data Freescale Semiconductor
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MRF6VP41KHR6 MRF6VP41KHSR6
Document Number: RF Device Data MRF6VP41KH Rev. 0, 1/2008 Freescale Semiconductor
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